Choose Frames or No Frames?

The ninth embodiment is characterized in that there is no crystal grain boundary in a connecting portion of the higher and decrease layers or a bending portion. Therefore, the atoms on the surface or grain boundary of the movie may be easily diffused with a small amount of energy. When the native oxide movie is formed on the surface of wiring metallic movie throughout the above process, the native oxide film shall be eliminated. When different materials equivalent to Cu, Ag and At aside from the Al is used because the wiring metal, a wettability enhancing layer having a superb wettability relative to the metal chosen shall be chosen to have the identical impact in the Al and C movie. Then, fuel utilized in the etching was CF.sub.4, an etching stress was 7.Eight mTorr, and the applied power was 50 W. By the RIE, the bottom face and facet face of the groove are made so that wettability thereof is nice.

As for material akin to Cu and Ag that have a decrease resistance than Al-containing materials, it is difficult to kind a compound having a high vapor strain. However, there's a limit in a material when it comes to the low resistance within the conventional Al alloy interconnection, so that a change to a new wiring materials is important. S.sub.A, S.sub.AB and S.sub.B are a surface space of the fabric A, an interfacial area between the material A and materials B, and a floor area of the material B, respectively, in the system thereof. According to another side of the current invention, there is provided a technique of producing a semiconductor device comprising the steps of: forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metallic film on the substrate; selectively removing the steel film formed in an space aside from the groove; eradicating a local oxide movie formed on the steel film; and agglomerating the metal movie by annealing in an vacuum ambiance in order to fill within the steel movie into the groove whereas re-formation of the native oxide film is suppressed.

Thereafter, annealing is performed in order that the metal skinny movie is filled into the groove by agglomeration. In one aspect of the current invention, there is offered a way for making single-crystal aluminum interconnection, the strategy comprises the steps of forming a groove having a predetermined pattern shape on the floor of a substrate; forming a steel movie on the substrate whereas response with the surface of the substrate is suppressed; and agglomerating the steel film by in-situ annealing, whereby agglomeration of the metal film is began earlier than the steel movie reacts with the floor of the substrate because of annealing, while formation of a native oxide on the metal movie is suppressed, and whereby the steel movie is stuffed into the groove by annealing at a predetermined temperature for a predetermined time period. The depletion of atom could cause a disconnection of interconnection, and the accumulation of atom could cause hillocks.

In different words, there occurs a depletion of atom in an upstream aspect the place the Al atom flows apart from the crystal boundary, and there occurs an accumulation of atom in a downstream side. Therefore, in a cathode facet of the W plug, the Al atoms transferred through the interconnection are accumulated and the hillock is formed, whereas, in an anode side of the plug, the Al atoms are depleted and the void is formed. With reference to FIG. 16C, the grooves may even be organized in a saw shape in a fashion that an angle between the neighboring sides, an angle between a aspect and an prolonged line of the opposite aspect, and an angle of prolonged line of every aspect are all 60 degrees. FIG. 7B exhibits that a bent portion of wiring 20 is bent in an angle of 60 and a hundred and twenty degrees. FIG. 7A shows that a bent portion of wiring 20 is bent in an angle of one hundred twenty levels. FIG. Four shows a relationship between a manufacturing fee of a response product by an oxide film and Al, and temperature thereof, in terms of logarithmic graph. FIG. 4 reveals relationship between a manufacturing price of a response product by an oxide film as a substrate and Al, and temperature thereof, in terms of logarithmic graph.

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